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  Datasheet File OCR Text:
 BDX53B - BDX53C BDX54B - BDX54C
Complementary power Darlington transistors
Features

Good hFE linearity High fT frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode
3 1 2
Application

Audio amplifiers Linear and switching industrial equipment
TO-220
Description
The devices are manufactured in planar base island technology with monolithic Darlington configuration. Figure 1. Internal schematic diagram
R1 typ.= 10 k
R2 typ.= 150
Table 1.
Device summary
Order code BDX53B BDX53C BDX54B BDX54C Marking BDX53B BDX53C TO-220 BDX54B BDX54C Tube Package Packaging
October 2007
Rev 4
1/7
www.st.com 7
Electrical ratings
BDX53B - BDX53C - BDX54B - BDX54C
1
Electrical ratings
Table 2. Absolute maximum ratings
Value Symbol Parameter NPN PNP VCBO VCEO VEBO IC ICM IB PTOT Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (repetitive) Base current Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature BDX53B BDX54B 80 80 5 8 12 0.2 60 -65 to 150 150 BDX53C BDX54C 100 100 V V V A A mA W C C Unit
Note:
For PNP types voltage and current values are negative.
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BDX53B - BDX53C - BDX54B - BDX54C
Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 3.
Symbol VCEO(sus)(1)
Electrical characteristics
Parameter Collector-emitter sustaining voltage (IB = 0) Test conditions IC = 100 mA for BDX53B - BDX54B for BDX53C - BDX54C VCB = 80 V Min. Typ. Max. Unit
80 100 0.2
V V mA
ICBO
Collector cut-off current (IE = 0)
for BDX53B - BDX54B VCB = 100 V for BDX53C - BDX54C VCE = 40 V
0.2
mA
ICEO
Collector cut-off current (IB = 0)
for BDX53B - BDX54B VCE = 50 V for BDX53C - BDX54C
0.5
mA
0.5
mA
IEBO VCE(sat)(1) VBE(sat)(1) hFE(1) VF(1)
Emitter cut-off current (IC = 0)
VEB = 5 V IB = 12 mA IB = 12 mA VCE = 3 V 750 1.8 2.5
2 2 2.5
mA V V
Collector-emitter saturation IC = 3 A; voltage Base-emitter saturation voltage DC current gain Diode forward voltage IC = 3 A; IC = 3 A; IF = 3 A; IF = 8 A;
2.5
V V
1. Pulsed: pulse duration = 300 s, duty cycle 1.5%
Note:
For PNP types voltage and current values are negative.
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Package mechanical data
BDX53B - BDX53C - BDX54B - BDX54C
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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BDX53B - BDX53C - BDX54B - BDX54C
Package mechanical data
TO-220 mechanical data
mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6
inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116
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Revision history
BDX53B - BDX53C - BDX54B - BDX54C
4
Revision history
Table 4.
Date 09-Sep-2004 23-Oct-2007
Document revision history
Revision 3 4 Technology change from epibase to planar (PCN APMPWR/07/2417 and APM-PWR/07/2615) Changes
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BDX53B - BDX53C - BDX54B - BDX54C
Revision history
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